j/sst/u308 series vishay siliconix document number: 70237 s-04028?rev. g, 04-jun-01 www.vishay.com 7-1 n-channel jfets j308 sst308 u309 j309 sst309 U310 j310 sst310
part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j308 ?1 to ?6.5 ?25 8 12 j309 ?1 to ?4 ?25 10 12 j310 ?2 to ?6.5 ?25 8 24 sst308 ?1 to ?6.5 ?25 8 12 sst309 ?1 to ?4 ?25 10 12 sst310 ?2 to ?6.5 ?25 8 24 u309 ?1 to ?4 ?25 10 12 U310 ?2.5 to ?6 ?25 10 24
excellent high frequency gain: gps 11.5 db @ 450 mhz very low noise: 2.7 db @ 450 mhz very low distortion high ac/dc switch off-isolation wideband high gain very high system sensitivity high quality of amplification high-speed switching capability high low-level signal amplification high-frequency amplifier/mixer oscillator sample-and-hold very low capacitance switches the j/sst/u308 series offers superb amplification characteristics. of special interest is its high-frequency performance. even at 450 mhz, this series offers high power gain at low noise. low-cost j series to-226aa (to-92) packaging supports automated assembly with tape-and-reel options. the sst series to-236 (sot-23) package provides surface-mount capabilities and is available with tape-and-reel options. the u series hermetically-sealed to-206ac (to-52) package supports full military processing. (see military and packaging information for further details.) for similar dual products packaged in the to-78, see the u430/431 data sheet d s g to-236 (sot-23) 2 3 1 to-226aa (to-92) top view j308 j309 j310 d g s 1 2 3 top view sst308 (z8)* sst309 (z9)* sst310 (z0)* *marking code for to-236 top view u309 U310 g and case to-206ac (to-52) d s 1 23 for applications information see an104.
j/sst/u308 series vishay siliconix www.vishay.com 7-2 document number: 70237 s-04028 ? rev. g, 04-jun-01
gate-drain, gate-source voltage ? 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current : (j/sst prefixes) 10 ma . . . . . . . . . . . . . . . . . . . . (u prefix) 20 ma . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature : (j/sst prefixes) ? 55 to 150 c . . . . . . . . . . . . . . (u prefix) ? 65 to 175 c . . . . . . . . . . . . . . . . . . . . operating junction temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : (j/sst prefixes) a 350 mw . . . . . . . . . . . . . . . . . (u prefix) b 500 mw . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c b. derate 4 mw/ c above 25 c
! limits j/sst308 j/sst309 j/sst310 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 35 ? 25 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 1 ? 6.5 ? 1 ? 4 ? 2 ? 6.5 v saturation drain current b i dss v ds = 10 v, v gs = 0 v 12 60 12 30 24 60 ma v gs = ? 15 v, v ds = 0 v ? 0.002 ? 1 ? 1 ? 1 na gate reverse current i gss t a = 125 c ? 0.001 ? 1 ? 1 ? 1 a gate operating current i g v dg = 9 v, i d = 10 ma ? 15 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 35 gate-source forward voltage v gs(f) i g = 10 ma v ds = 0 v j 0.7 1 1 1 v dynamic common-source forward transconductance g fs v ds = 10 v, i d = 10 ma 14 8 10 8 ms common-source output conductance g os v ds = 10 v, i d = 10 ma f = 1 khz 110 250 250 250 s common-source j 4 5 5 5 common-source input capacitance c iss v ds = 10 v sst 4 common-source ds v gs = ? 10 v f = 1 mhz j 1.9 2.5 2.5 2.5 pf common-source reverse transfer capacitance c rss f = 1 mhz sst 1.9 equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv ? hz high frequency common-gate f = 105 mhz 14 common-gate forward transconductance g fg f = 450 mhz 13 common-gate f = 105 mhz 0.16 ms common-gate output conductance g og v ds = 10 v f = 450 mhz 0.55 v ds = 10 v i d = 10 ma f = 105 mhz 16 common-gate power gain c g pg f = 450 mhz 11.5 f = 105 mhz 1.5 db noise figure nf f = 450 mhz 2.7 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nzb b. pulse test: pw 300 s duty cycle 3%. c. gain (g pg ) measured at optimum input noise match.
j/sst/u308 series vishay siliconix document number: 70237 s-04028 ? rev. g, 04-jun-01 www.vishay.com 7-3
! limits u309 U310 parameter symbol test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 35 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 1 ? 4 ? 2.5 ? 6 v saturation drain current b i dss v ds = 10 v, v gs = 0 v 12 30 24 60 ma v gs = ? 15 v, v ds = 0 v ? 0.002 ? 0.15 ? 0.15 na gate reverse current i gss t a = 125 c ? 0.001 ? 0.15 ? 0.15 a gate operating current i g v dg = 9 v, i d = 10 ma ? 15 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 35 gate-source forward voltage v gs(f) i g = 10 ma , v ds = 0 v 0.7 1 1 v dynamic common-source forward transconductance g fs v ds = 10 v, i d = 10 ma 14 10 10 ms common-source output conductance g os v ds = 10 v, i d = 10 ma f = 1 khz 110 250 250 s common-source input capacitance c iss v ds = 10 v, v gs = ? 10 v 4 5 5 common-source reverse transfer capacitance c rss v ds = 10 v, v gs = ? 10 v f = 1 mhz 1.9 2.5 2.5 pf equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv ? hz high frequency common-gate f = 105 mhz 14 common-gate forward transconductance g fg f = 450 mhz 13 common-gate f = 105 mhz 0.16 ms common-gate output conductance g og v = 10 v f = 450 mhz 0.55 v ds = 10 v i d = 10 ma f = 105 mhz 16 14 14 common-gate power gain c g pg f = 450 mhz 11.5 10 10 f = 105 mhz 1.5 2 2 db noise figure nf f = 450 mhz 2.7 3.5 3.5 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nzb b. pulse test: pw 300 s duty cycle 3%. c. gain (g pg ) measured at optimum input noise match.
j/sst/u308 series vishay siliconix www.vishay.com 7-4 document number: 70237 s-04028 ? rev. g, 04-jun-01 " "# ! 100 0 ? 5 ? 4 ? 3 ? 1 80 20 0 50 40 10 0 drain current and transconductance vs. gate-source cutoff voltage gate leakage current output characteristics on-resistance and output conductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) i d ? drain current (ma) v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss t a = ? 55 c 25 c 125 c v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v v gs(off) = ? 3 v 60 40 ? 2 30 20 100 ? 3 ? 5 ? 4 ? 1 80 0 300 240 120 60 0 60 40 20 ? 2 0 180 r ds @ i d = 1 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds 06 31215 9 i gss @ 125 c t a = 125 c t a = 25 c 200 ma 0.1 1 10 20 16 8 4 0 12 15 0 0.4 0.2 0.8 1 12 6 3 0 9 0.6 ? 1.0 v g os i gss @ 25 c 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na v ds = 10 v f = 1 khz v gs(off) = ? 1.5 v 10 ma output characteristics v ds ? drain-source voltage (v) v gs = 0 v ? 1.2 v ? 0.4 v ? 1.6 v ? 0.8 v 30 0 0.4 0.2 0.8 1 24 12 6 0 18 0.6 ? 2.0 v ? 2.4 v v gs(off) = ? 3 v i g @ i d = 10 ma 200 ma i dss ? saturation drain current (ma) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) g os ? output conductance ( s) i g ? gate leakage i d ? drain current (ma) i d ? drain current (ma) g fs ? forward transconductance (ms)
j/sst/u308 series vishay siliconix document number: 70237 s-04028 ? rev. g, 04-jun-01 www.vishay.com 7-5 " "# ! output characteristics v ds ? drain-source voltage (v) 50 04 2810 40 20 10 0 30 6 ? 2.4 v v gs = 0 v ? 0.4 v ? 0.8 v ? 1.2 v ? 1.6 v ? 2.0 v transfer characteristics v gs ? gate-source voltage (v) 30 0 ? 1.2 ? 0.4 ? 1.6 ? 2 24 12 6 0 18 ? 0.8 t a = ? 55 c v gs(off) = ? 1.5 v 125 c transfer characteristics v gs ? gate-source voltage (v) 100 0 ? 1.8 ? 0.6 ? 2.4 ? 3 80 40 20 0 60 ? 1.2 t a = ? 55 c 25 c v gs(off ) = ? 3 v 125 c 30 0 ? 1.2 ? 1.6 ? 0.4 ? 2 24 12 6 0 ? 0.8 18 transconductance vs. gate-source voltage v gs ? gate-source voltage (v) v gs(off) = ? 1.5 v t a = ? 55 c 125 c 50 0 ? 1.8 ? 2.4 ? 0.6 ? 3 40 20 10 0 ? 1.2 30 transconductance vs. gate-source voltage v gs ? gate-source voltage (v) t a = ? 55 c 25 c 125 c v gs(off) = ? 3 v v gs(off) = ? 3 v v ds = 10 v v ds = 10 v v ds = 10 v f = 1 khz v ds = 10 v f = 1 khz 25 c 25 c output characteristics v ds ? drain-source voltage (v) v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.0 v 20 068 210 16 8 4 0 4 12 v gs(off) = ? 1.5 v g fs ? forward transconductance (ms) g fs ? forward transconductance (ms) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
j/sst/u308 series vishay siliconix www.vishay.com 7-6 document number: 70237 s-04028 ? rev. g, 04-jun-01 " "# ! 1 10 100 100 80 40 20 0 60 v gs(off) = ? 1.5 v v gs(off) = ? 3 v on-resistance vs. drain current i d ? drain current (ma) 110 0.1 100 80 40 20 0 60 i d ? drain current (ma) r l 10 v i d assume v dd = 15 v, v ds = 5 v v gs(off) = ? 1.5 v v gs(off) = ? 3 v circuit voltage gain vs. drain current 15 0 ? 12 ? 16 ? 20 ? 4 12 6 3 0 9 ? 8 common-source input capacitance vs. gate-source voltage v ds = 0 v f = 1 mhz v ds = 5 v v gs ? gate-source voltage (v) common-source reverse feedback capacitance vs. gate-source voltage 10 0 ? 12 ? 20 ? 16 ? 4 8 4 2 0 6 ? 8 v ds = 0 v f = 1 mhz v ds = 5 v v gs ? gate-source voltage (v) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate g ig b ig input admittance vs. frequency f ? frequency (mhz) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate ? g fg b fg forward admittance vs. frequency f ? frequency (mhz) 200 500 200 500 a v g fs r l 1 r l g os a v ? voltage gain r ds(on) ? drain-source on-resistance ( ? ) c iss ? input capacitance (pf) c rss ? reverse feedback capacitance (pf)
j/sst/u308 series vishay siliconix document number: 70237 s-04028 ? rev. g, 04-jun-01 www.vishay.com 7-7 " "# ! 10 100 1 k 100 k 10 k 20 16 8 4 0 12 equivalent input noise voltage vs. frequency i d = 1 ma v ds = 10 v i d = 10 ma f ? frequency (hz) 150 120 60 30 0 0.1 1 10 90 output conductance vs. drain current v gs(off) = ? 3 v i d ? drain current (ma) t a = ? 55 c 25 c 125 c 10 1 0.1 0.01 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate ? b rg ? g rg +g rg reverse admittance vs. frequency f ? frequency (mhz) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate g og b og output admittance vs. frequency f ? frequency (mhz) 200 500 200 500 v ds = 10 v f = 1 khz e n ? noise voltage nv / hz gos ? output conductance ( s)
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